tn0201l/0401l, VN0300L/ls vishay siliconix document number: 70199 s-04279?rev. e, 16-jul-01 www.vishay.com 11-1 n-channel 20-, 30-, 40-v (d-s) mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) tn0201l 20 1.2 @ v gs = 10 v 0.5 to 2 0.64 tn0401l 40 1.2 @ v gs = 10 v 0.5 to 2 0.64 VN0300L 30 1.2 @ v gs = 10 v 0.8 to 2.5 0.64 VN0300Ls 30 1.2 @ v gs = 10 v 0.8 to 2.5 0.67
low on-resistance: 0.85 low threshold: 1.4 v low input capacitance: 38 pf fast switching speed: 9 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays top view to-226aa (to-92) s d g 1 2 3 to-92s (copper lead frame) top view s d g 1 2 3 tn0201l tn0401l VN0300L VN0300Ls tn0201l ?s? tn 0201l xxyy tn0401l ?s? tn 0401l xxyy VN0300L ?s? vn 0300l xxyy ?s? = siliconix logo xxyy = date code ?s? vn 0300ls xxyy VN0300Ls ?s? = siliconix logo xxyy = date code device marking front view device marking front view
parameter symbol tn0201l tn0401l VN0300L VN0300Ls unit drain-source voltage v ds 20 40 30 30 gate-source voltage v gs 20 20 30 30 v continuous drain current t a = 25 c 0.64 0.64 0.64 0.67 continuous drain current (t j = 150 c) t a = 100 c i d 0.38 0.38 0.38 0.43 a pulsed drain current a i dm 1.5 1.5 3 3 t a = 25 c 0.8 0.8 0.8 0.9 power dissipation t a = 100 c p d 0.32 0.32 0.32 0.4 w thermal resistance, junction-to-ambient r thja 156 156 156 156 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature.
tn0201l/0401l, VN0300L/ls vishay siliconix www.vishay.com 11-2 document number: 70199 s-04279 ? rev. e, 16-jul-01
limits tn0201l tn0401l VN0300L VN0300Ls parameter symbol test conditions typ a min max min max unit static tn0201l 55 20 drain-source breakdown voltage v (br)dss v gs = 0 v i = 10 a tn0401l 55 40 i d = 10 a 30 v v ds = v gs , i d = 0.25 ma 1.4 0.5 2 gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.5 0.8 2.5 v ds = 0 v, v gs = 20 v 10 gate-body leakage i gss v ds = 0 v, v gs = 30 v 100 na v ds = 30 v, v gs = 0 v 10 t j = 125 c 500 zero gate voltage drain current i dss v ds = 0.8 x v (br)dss , v gs = 0 v 1 a t j = 125 c 100 v ds = 10 v, v gs = 4.5 v 0.9 0.25 on-state drain current b i d(on) v ds = 10 v, v gs = 10 v 3.5 1 1 a v gs = 3.5 v, i d = 0.05 a 1.8 4 v gs = 5 v, i d = 0.3 a 1.2 3.3 v gs = 4.5 v, i d = 0.25 a 1.4 2 drain-source on-resistance b r ds(on) t j = 125 c 2.6 4 v gs = 10 v, i d = 1 a 0.85 1.2 1.2 t j = 125 c 1.6 2.4 forward transconductance b g fs v ds = 10 v, i d = 0.5 a 500 200 200 ms dynamic input capacitance c iss 38 60 100 output capacitance c oss v ds = 15 v, v gs = 0 v, f = 1 mhz 33 50 95 pf reverse transfer capacitance c rss 8 15 25 switching c turn-on time t on v dd = 15 v, r l = 14 10 30 30 turn-off time t off i d 1 a, v gen = 10 v r g = 25 13 30 30 ns notes a. for design aid only, not subject to production testing.. vndq03 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
tn0201l/0401l, VN0300L/ls vishay siliconix document number: 70199 s-04279 ? rev. e, 16-jul-01 www.vishay.com 11-3 ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v ds ? drain-to-source voltage (v) v ds ? drain-to-source voltage (v) i d ? drain current (a) t j ? junction temperature ( c) 2.0 0123 45 1.6 1.2 0.8 0.4 0 6 v 5 v 4 v 3 v 2 v 7 v v gs = 10 v 200 0 0.4 0.8 1.2 1.6 2.0 160 120 80 40 0 1.7 v 2.1 v 2.3 v 2.5 v 2.7 v 2.9 v 500 400 300 0 01 5 200 100 234 125 c 25 c v ds = 15 v t j = ? 55 c 2.5 2.0 1.5 0 01 1.0 0.5 23 0 4 8 12 16 20 3 2 0 1 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 i d = 0.5 a 0.1 a 10 v i d = 0.2 a v gs = 4.5 v 6 v 10 v v gs = 10 v 0.5 a 1.0 a i d ? drain current (a) i d ? drain current (ma) i d ? drain current (ma) r ds(on) ? on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
tn0201l/0401l, VN0300L/ls vishay siliconix www.vishay.com 11-4 document number: 70199 s-04279 ? rev. e, 16-jul-01 0.1 1 10 100 10 1 v dd = 25 v r g = 25 v gs = 0 to 10 v t d(on) threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) i d ? drain current (a) v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) q g ? total gate charge (pc) t d(off) t r t f 10 1 0.6 0.8 2.0 1.0 1.2 1.4 1.6 1.8 v ds = 10 v ? 55 c 0.1 0.01 t j = 150 c 120 100 80 0 010 50 60 40 20 30 40 20 c iss c rss c oss 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 5 k 1 100 500 10 0.5 5 50 1 k 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 6 5 4 0 0 80 400 3 2 160 240 320 1 i d = 1 a v ds = 15 v 24 v 100 c 25 c i d ? drain current (ma) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns) v gs = 0 v f = mhz
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